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SiC-MOSFET IXFN50N120SK
Über dieses Produkt
Siliziumkarbid-MOSFET im SOT-227-Gehäuse, Ids=68A@25°C, Vdss=1200V, Hersteller IXYS/Littelfuse
GeprüftMJC Elektrotechnik GmbH
Am Gielbrunnen 17, DE-67304 Eisenberg
Lieferung: Europa
Gegründet: 1997
Mitarbeiter: 20-49
Lieferantentyp
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DienstleisterZertifikate(5)
DIN EN ISO 9001:2015
IQNet ISO 9001:2015
IRIS
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RoHS 2015/863/EU
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SiC-MOSFET IXFN50N120SK